|
|
Fabrication of Graphene and Study of its Physical Properties
Procházka, Pavel ; Rezek, Bohuslav (referee) ; Kalbáč,, Martin (referee) ; Dub, Petr (advisor)
This doctoral thesis is focused on the preparation of graphene layers by Chemical Vapor Deposition (CVD) and their utilization for fabrication and characterization of field effect transistors. The theoretical part of the thesis deals with different methods of graphene production and measurement of its transport properties. In the first part of the experimental section the growth of polycrystalline graphene and individual graphene crystals with sizes up to 300 m is investigated. Further, graphene layer was also grown on an atomically flat copper foils, which were fabricated in order to achieve the growth of graphene of higher quality. Subsequently, the transport properties of field effect transistors produced from the grown layers were measured. The last two chapters deal with a doping of graphene layer by gallium atoms and X-ray radiation. Whereas the deposition of gallium atoms on the graphene surface causes chemical doping of graphene layer by charge transfer, X-ray irradiation of graphene field effect transistors induces the ionization of positively charged defects in dielectrics, which electrostatically dope a graphene layer.
|
|
|
Preparation of graphene membranes for Ga deposition
Severa, Jiří ; Bartošík, Miroslav (referee) ; Mach, Jindřich (advisor)
This bachelor’s thesis deals with the production of graphene membranes, which would be suitable for the deposition of gallium atoms. In the first part is characterized graphene. The second part is focused on preparation and improvement the production of graphene layers via atomically flat Cu foils. In the third part are described graphene membranes, techniques of their production and specific applications of graphene membranes. The fourth part introduced interface between gallium and graphene layers. The fifth part is the practical part. Graphene was grown on different Cu foils which resulted in higher quality graphene grown on smooth foils. Subsequently, the production of graphene membranes and deposition of gallium atoms were done.
|
|
|
Preparation of graphene membranes for Ga deposition
Severa, Jiří ; Bartošík, Miroslav (referee) ; Mach, Jindřich (advisor)
This bachelor’s thesis deals with the production of graphene membranes, which would be suitable for the deposition of gallium atoms. In the first part is characterized graphene. The second part is focused on preparation and improvement the production of graphene layers via atomically flat Cu foils. In the third part are described graphene membranes, techniques of their production and specific applications of graphene membranes. The fourth part introduced interface between gallium and graphene layers. The fifth part is the practical part. Graphene was grown on different Cu foils which resulted in higher quality graphene grown on smooth foils. Subsequently, the production of graphene membranes and deposition of gallium atoms were done.
|
|
|
Fabrication of Graphene and Study of its Physical Properties
Procházka, Pavel ; Rezek, Bohuslav (referee) ; Kalbáč,, Martin (referee) ; Dub, Petr (advisor)
This doctoral thesis is focused on the preparation of graphene layers by Chemical Vapor Deposition (CVD) and their utilization for fabrication and characterization of field effect transistors. The theoretical part of the thesis deals with different methods of graphene production and measurement of its transport properties. In the first part of the experimental section the growth of polycrystalline graphene and individual graphene crystals with sizes up to 300 m is investigated. Further, graphene layer was also grown on an atomically flat copper foils, which were fabricated in order to achieve the growth of graphene of higher quality. Subsequently, the transport properties of field effect transistors produced from the grown layers were measured. The last two chapters deal with a doping of graphene layer by gallium atoms and X-ray radiation. Whereas the deposition of gallium atoms on the graphene surface causes chemical doping of graphene layer by charge transfer, X-ray irradiation of graphene field effect transistors induces the ionization of positively charged defects in dielectrics, which electrostatically dope a graphene layer.
|
guest ::
